Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CLS01(TE16R,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
7,583 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 30 V | 10A | 470 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 530pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS01,LFJFQ(ODIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
2,274 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 30 V | 10A | 470 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 530pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS02(T6L,CANO-O,QDIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
2,625 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 40 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 420pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS02(T6L,CLAR,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
4,300 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 40 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 420pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS02(TE16L,HIT,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
3,628 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 40 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 420pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS02(TE16L,SQC,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
3,240 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 40 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 420pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS02(TE16R,Q)DIODE SCHOTTKY 40V 10A L-FLAT Toshiba Semiconductor and Storage |
3,318 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 40 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 420pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS03(T6L,CANO-O,QDIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
4,870 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 60 V | 10A | 580 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 345pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS03(T6L,SHINA,Q)DIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
4,395 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 60 V | 10A | 580 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 345pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS03(TE16L,DNSO,QDIODE SCHOTTKY 60V 10A L-FLAT Toshiba Semiconductor and Storage |
5,368 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 60 V | 10A | 580 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 345pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
