Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CLH01(TE16L,Q)DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage |
7,568 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 3A | 980 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH03(TE16L,Q)DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage |
7,801 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | - |
|
CLH05(T6L,NKOD,Q)DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
6,300 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 5A | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH05(TE16R,Q)DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
6,098 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 5A | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH05,LMBJQ(ODIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
9,589 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 5A | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH06(TE16L,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage |
3,653 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 300 V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | - |
|
CLH07(TE16L,NMB,Q)DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage |
3,498 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | 5A | 1.8 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH07(TE16R,Q)DIODE GEN PURP 400V 5A L-FLAT Toshiba Semiconductor and Storage |
4,531 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | 5A | 1.8 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | - | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLS01(T6LSONY,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
2,161 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 30 V | 10A | 470 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 530pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
CLS01(TE16L,PAS,Q)DIODE SCHOTTKY 30V 10A L-FLAT Toshiba Semiconductor and Storage |
3,213 |
|
|
- | L-FLAT™ | Bulk | Obsolete | Schottky | 30 V | 10A | 470 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 530pF @ 10V, 1MHz | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
