Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXPSC10650X6QDIODE SIL CARB 650V 10A TO220F WeEn Semiconductors |
2,995 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C (Max) |
|
NXPSC10650B6JDIODE SIL CARBIDE 650V 10A D2PAK WeEn Semiconductors |
2,290 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
|
NXPSC126506QDIODE SIL CARB 650V 12A TO220AC WeEn Semiconductors |
990 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC6D20650B6JDIODE SIL CARBIDE 650V 20A D2PAK WeEn Semiconductors |
4,518 |
|
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 780pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C |
|
|
NXPSC10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
1,916 |
|
|
- | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNSC2D151200WQDIODE SIL CARB 1.2KV 15A TO247-2 WeEn Semiconductors |
4,589 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 15A | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 700pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
|
NXPSC166506QDIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors |
3,003 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
NXPSC10650D6JDIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors |
7,204 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | 175°C (Max) |
|
NXPSC206506QDIODE SIL CARB 650V 20A TO220AC WeEn Semiconductors |
3,041 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 500 µA @ 650 V | 600pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
|
WNSC2D30650WQSILICON CARBIDE SCHOTTKY DI WeEn Semiconductors |
275 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 980pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
