Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UJ3D1220KSDDIODE SIL CARB 1.2KV 10A TO247-3 Qorvo |
1,188 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 1200 V | 1020pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
UJ3D06504TSDIODE SIL CARB 650V 4A TO220-2 Qorvo |
22,764 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 118pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06508TSDIODE SIL CARB 650V 8A TO220-2 Qorvo |
28,148 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06512TSDIODE SIL CARB 650V 12A TO220-2 Qorvo |
10,601 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D06516TSDIODE SIL CARB 650V 16A TO220-2 Qorvo |
938 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D1210K2DIODE SIL CARB 1.2KV 10A TO247-2 Qorvo |
7,101 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 510pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
UJ3D06530TSDIODE SIL CARB 650V 30A TO220-2 Qorvo |
7,715 |
|
|
Gen-III | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 370 µA @ 650 V | 990pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
UJ3D1220K2DIODE SIL CARB 1.2KV 20A TO247-2 Qorvo |
327 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 1200 V | 810pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
UJ3D06520KSDDIODE SIL CARB 650V 10A TO247-3 Qorvo |
9,218 |
|
|
Gen-III | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 654pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
UJ3D1210KSDDIODE SIL CARB 1.2KV 5A TO247-3 Qorvo |
528 |
|
|
- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 1200 V | 500pF @ 1V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
