Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
JANTX1N5622

JANTX1N5622

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology

4,981
RFQ
JANTX1N5622Datenblatt - A, Axial Bulk Active Standard 1000 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 1000 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N5619US

1N5619US

DIODE GEN PURP 600V 1A D-5A

Microchip Technology

4,921
RFQ
1N5619USDatenblatt - SQ-MELF, A Bulk Active Standard 600 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 500 nA @ 600 V 25pF @ 12V, 1MHz - - Surface Mount D-5A -65°C ~ 175°C
1N5811

1N5811

DIODE GEN PURP 150V 3A B AXIAL

Microchip Technology

9
RFQ
1N5811Datenblatt - B, Axial Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5806US

JANTX1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

7,663
RFQ
JANTX1N5806USDatenblatt - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N5811US/TR

1N5811US/TR

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

2
RFQ
1N5811US/TRDatenblatt - SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz - - Surface Mount B, SQ-MELF -65°C ~ 175°C
MSC030SDA070S

MSC030SDA070S

DIODE SIL CARBIDE 700V 60A D3PAK

Microchip Technology

24
RFQ
MSC030SDA070SDatenblatt - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active SiC (Silicon Carbide) Schottky 700 V 60A 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V - - - Surface Mount D3PAK -55°C ~ 175°C
JANTX1N5420

JANTX1N5420

DIODE GEN PURP 600V 3A B AXIAL

Microchip Technology

5,551
RFQ
JANTX1N5420Datenblatt - B, Axial Bulk Active Standard 600 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 1 µA @ 600 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
JANTXV1N5806US

JANTXV1N5806US

DIODE GEN PURP 150V 1A D-5A

Microchip Technology

18
RFQ
JANTXV1N5806USDatenblatt - SQ-MELF, A Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N5825

1N5825

DIODE SCHOTTKY 40V 5A TOP HAT

Microchip Technology

8,012
RFQ
1N5825Datenblatt - Axial Bulk Active Schottky 40 V 5A 380 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 40 V - - - Through Hole TOP HAT -
JANTX1N5616

JANTX1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

5,526
RFQ
JANTX1N5616Datenblatt - A, Axial Bulk Active Standard 400 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
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