Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
1N5416

1N5416

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

4,931
RFQ
1N5416Datenblatt - B, Axial Bulk Active Standard 100 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 100 V - - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5811

JANTX1N5811

DIODE GEN PURP 150V 3A AXIAL

Microchip Technology

22
RFQ
JANTX1N5811Datenblatt - B, Axial Bulk Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
1N6640US

1N6640US

DIODE GEN PURP 75V 300MA D-5D

Microchip Technology

2,544
RFQ
1N6640USDatenblatt - SQ-MELF, D Bulk Active Standard 75 V 300mA 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - - - Surface Mount D-5D -65°C ~ 175°C
1N6677UR-1

1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

7,120
RFQ
1N6677UR-1Datenblatt - DO-213AA Bulk Active Schottky 40 V 200mA 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz - - Surface Mount DO-213AA -65°C ~ 125°C
JAN1N4245

JAN1N4245

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

5,269
RFQ
JAN1N4245Datenblatt - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 200 V - Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
1N5617

1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

4,490
RFQ
1N5617Datenblatt - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N5617

JANTX1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

7,740
RFQ
JANTX1N5617Datenblatt - A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
JANTX1N4942

JANTX1N4942

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

6,776
RFQ
JANTX1N4942Datenblatt - A, Axial Bulk Active Standard 200 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
JANTX1N3612

JANTX1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

2
RFQ
JANTX1N3612Datenblatt - A, Axial Bulk Active Standard 400 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5552

JANTX1N5552

DIODE GEN PURP 600V 5A AXIAL

Microchip Technology

8,662
RFQ
JANTX1N5552Datenblatt - B, Axial Bulk Active Standard 600 V 5A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
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