Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1N8034-GADIODE SIL CARB 650V 9.4A TO257 GeneSiC Semiconductor |
6,554 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 9.4A | 1.34 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 1107pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8035-GADIODE SIL CARB 650V 14.6A TO276 GeneSiC Semiconductor |
3,320 |
|
|
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 14.6A | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 1107pF @ 1V, 1MHz | - | - | Surface Mount | TO-276 | -55°C ~ 250°C |
|
GAP05SLT80-220DIODE SCHOTTKY 8KV 50MA AXIAL GeneSiC Semiconductor |
9,212 |
|
|
- | Axial | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 8000 V | 50mA | 4.6 V @ 50 mA | No Recovery Time > 500mA (Io) | 0 ns | 3.8 µA @ 8000 V | 25pF @ 1V, 1MHz | - | - | Through Hole | - | -55°C ~ 175°C |
|
|
GB02SHT01-46DIODE SIL CARBIDE 100V 4A TO46 GeneSiC Semiconductor |
6,492 |
|
|
- | TO-206AB, TO-46-3 Metal Can | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 100 V | 4A | 1.6 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 100 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-46 | -55°C ~ 210°C |
|
MBRH30020LDIODE SCHOTTKY 20V 300A D-67 GeneSiC Semiconductor |
7,200 |
|
|
- | D-67 | Bulk | Obsolete | Schottky | 20 V | 300A | 580 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 mA @ 20 V | - | - | - | Chassis Mount | D-67 | -55°C ~ 150°C |
