Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S400QDIODE GP 1.2KV 400A DO205AB DO9 GeneSiC Semiconductor |
3,416 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1200 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400QRDIODE GP REV 1.2KV 400A DO205AB GeneSiC Semiconductor |
4,366 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400YDIODE GP 1.6KV 400A DO205AB DO9 GeneSiC Semiconductor |
2,650 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400YRDIODE GP REV 1.6KV 400A DO205AB GeneSiC Semiconductor |
4,194 |
|
|
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1600 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
|
1N8030-GADIODE SIL CARB 650V 750MA TO257 GeneSiC Semiconductor |
8,359 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 750mA | 1.39 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8031-GADIODE SIL CARBIDE 650V 1A TO276 GeneSiC Semiconductor |
9,043 |
|
|
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1A | 1.5 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-276 | -55°C ~ 250°C |
|
|
1N8032-GADIODE SIL CARB 650V 2.5A TO257 GeneSiC Semiconductor |
9,538 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 2.5A | 1.3 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8024-GADIODE SIL CARB 1.2KV 750MA TO257 GeneSiC Semiconductor |
6,134 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 750mA | 1.74 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 66pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8033-GADIODE SIL CARB 650V 4.3A TO276 GeneSiC Semiconductor |
2,273 |
|
|
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4.3A | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Surface Mount | TO-276 | -55°C ~ 250°C |
|
|
1N8026-GADIODE SIL CARBIDE 1.2KV 8A TO257 GeneSiC Semiconductor |
6,833 |
|
|
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.6 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 237pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
