Dioden-Arrays
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Diodenkonfiguration | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Betriebstemperatur - Sperrschicht | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FST83100MDIODE MOD SCHOTT 100V 80A D61-3M GeneSiC Semiconductor |
6,162 |
|
|
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Schottky | 100 V | 80A (DC) | 840 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
FST8330MDIODE MOD SCHOTT 30V 80A D61-3M GeneSiC Semiconductor |
2,965 |
|
|
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Schottky | 30 V | 80A (DC) | 650 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
FST8335MDIODE MOD SCHOTT 35V 80A D61-3M GeneSiC Semiconductor |
2,341 |
|
|
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Schottky | 35 V | 80A (DC) | 650 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
FST8340MDIODE MOD SCHOTT 40V 80A D61-3M GeneSiC Semiconductor |
8,812 |
|
|
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Schottky | 40 V | 80A (DC) | 650 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
FST8345MDIODE MOD SCHOTT 45V 80A D61-3M GeneSiC Semiconductor |
3,034 |
|
|
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Schottky | 45 V | 80A (DC) | 650 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
FST8380MDIODE MOD SCHOTT 80V 80A D61-3M GeneSiC Semiconductor |
2,736 |
|
|
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Schottky | 80 V | 80A (DC) | 840 mV @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
GC2X10MPS12-247DIODE ARR SIC 1200V 50A TO247-3 GeneSiC Semiconductor |
2,579 |
|
|
SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 50A (DC) | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
|
GC2X15MPS12-247DIODE ARR SIC 1200V 75A TO247-3 GeneSiC Semiconductor |
2,805 |
|
|
SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 75A (DC) | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
|
GC2X20MPS12-247DIODE ARR SIC 1200V 90A TO247-3 GeneSiC Semiconductor |
8,207 |
|
|
SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 90A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
|
MUR2X030A06DIODE MODULE GP 600V 30A SOT-227 GeneSiC Semiconductor |
6,271 |
|
|
- | SOT-227-4, miniBLOC | Bulk | Obsolete | 2 Independent | Standard | 600 V | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 25 µA @ 600 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
