Dioden-Arrays
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Diodenkonfiguration | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Betriebstemperatur - Sperrschicht | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GD2X50MPS12NDIODE MOD SIC 1200V 76A SOT-227 GeneSiC Semiconductor |
221 |
|
|
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 76A (DC) | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GD2X25MPS17NDIODE MOD SIC 1700V 50A SOT-227 GeneSiC Semiconductor |
184 |
|
|
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1700 V | 50A (DC) | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
MBR2X120A045DIODE MOD SCHOTT 45V 120A SOT227 GeneSiC Semiconductor |
308 |
|
|
- | SOT-227-4, miniBLOC | Bulk | Active | 2 Independent | Schottky | 45 V | 120A | 700 mV @ 120 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | -40°C ~ 150°C | - | - | Chassis Mount | SOT-227 |
|
GD2X150MPS06NDIODE MOD SIC 650V 150A SOT-227 GeneSiC Semiconductor |
418 |
|
|
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 650 V | 150A (DC) | 1.8 V @ 150 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GD2X75MPS17NDIODE MOD SIC 1700V 115A SOT-227 GeneSiC Semiconductor |
214 |
|
|
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1700 V | 115A (DC) | - | No Recovery Time > 500mA (Io) | - | - | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GD2X30MPS12DDIODE ARR SIC 1200V 55A TO247-3 GeneSiC Semiconductor |
569 |
|
|
SiC Schottky MPS™ | TO-247-3 | Tube | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 55A (DC) | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
|
GD2X30MPS12NDIODE MOD SIC 1200V 52A SOT-227 GeneSiC Semiconductor |
220 |
|
|
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 52A (DC) | - | No Recovery Time > 500mA (Io) | - | - | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GD2X60MPS06NDIODE MOD SIC 650V 70A SOT-227 GeneSiC Semiconductor |
369 |
|
|
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 650 V | 70A (DC) | 1.8 V @ 60 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GD2X100MPS12NDIODE MOD SIC 1200V 136A SOT-227 GeneSiC Semiconductor |
102 |
|
|
MSP | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 136A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
MBRT200100DIODE MOD SCHOT 100V 100A 3TOWER GeneSiC Semiconductor |
112 |
|
|
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 100 V | 100A | 880 mV @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
