Dioden-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket
MSRT100120AD

MSRT100120AD

DIODE MOD GP 1200V 100A 3TOWER

GeneSiC Semiconductor

6,590
RFQ
MSRT100120ADDatenblatt - Three Tower Bulk Active 1 Pair Series Connection Standard 1200 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT100140AD

MSRT100140AD

DIODE MOD GP 1400V 100A 3TOWER

GeneSiC Semiconductor

9,499
RFQ
MSRT100140ADDatenblatt - Three Tower Bulk Active 1 Pair Series Connection Standard 1400 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT100160AD

MSRT100160AD

DIODE MOD GP 1600V 100A 3TOWER

GeneSiC Semiconductor

9,722
RFQ
MSRT100160ADDatenblatt - Three Tower Bulk Active 1 Pair Series Connection Standard 1600 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT10060AD

MSRT10060AD

DIODE MODULE GP 600V 100A 3TOWER

GeneSiC Semiconductor

2,116
RFQ
MSRT10060ADDatenblatt - Three Tower Bulk Active 1 Pair Series Connection Standard 600 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT10080AD

MSRT10080AD

DIODE MODULE GP 800V 100A 3TOWER

GeneSiC Semiconductor

3,415
RFQ
MSRT10080ADDatenblatt - Three Tower Bulk Active 1 Pair Series Connection Standard 800 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT250100A

MSRT250100A

DIODE MOD GP 1000V 250A 3TOWER

GeneSiC Semiconductor

8,727
RFQ
MSRT250100ADatenblatt - Three Tower Bulk Active 1 Pair Common Cathode Standard 1000 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT250120A

MSRT250120A

DIODE MOD GP 1200V 250A 3TOWER

GeneSiC Semiconductor

7,391
RFQ
MSRT250120ADatenblatt - Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT250140A

MSRT250140A

DIODE MOD GP 1400V 250A 3TOWER

GeneSiC Semiconductor

8,772
RFQ
MSRT250140ADatenblatt - Three Tower Bulk Active 1 Pair Common Cathode Standard 1400 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT250160A

MSRT250160A

DIODE MOD GP 1600V 250A 3TOWER

GeneSiC Semiconductor

3,690
RFQ
MSRT250160ADatenblatt - Three Tower Bulk Active 1 Pair Common Cathode Standard 1600 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRT25060A

MSRT25060A

DIODE MODULE GP 600V 250A 3TOWER

GeneSiC Semiconductor

6,134
RFQ
MSRT25060ADatenblatt - Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
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