Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
1N5400BULK

1N5400BULK

DIODE GEN PURP 50V 3A DO201AD

EIC SEMICONDUCTOR INC.

4,000
RFQ
1N5400BULKDatenblatt - DO-201AD, Axial Bag Active Standard 50 V 3A 950 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 50 V 28pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 175°C
1N5407BULK

1N5407BULK

DIODE GEN PURP 800V 3A DO201AD

EIC SEMICONDUCTOR INC.

4,000
RFQ
1N5407BULKDatenblatt - DO-201AD, Axial Bag Active Standard 800 V 3A 950 mV @ 3 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 28pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 175°C
RM11A-BULK

RM11A-BULK

DIODE GEN PURP 600V 1.2A D2

EIC SEMICONDUCTOR INC.

5,000
RFQ
RM11A-BULKDatenblatt - D-2, Axial Bag Active Standard 600 V 1.2A 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V 30pF @ 4V, 1MHz - - Through Hole D2 -65°C ~ 175°C
RM11B-BULK

RM11B-BULK

DIODE GEN PURP 800V 1.2A D2

EIC SEMICONDUCTOR INC.

5,000
RFQ
RM11B-BULKDatenblatt - D-2, Axial Bag Active Standard 800 V 1.2A 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 30pF @ 4V, 1MHz - - Through Hole D2 -65°C ~ 175°C
1N4005BULK

1N4005BULK

DIODE GEN PURP 600V 1A DO41

EIC SEMICONDUCTOR INC.

7,000
RFQ
1N4005BULKDatenblatt - DO-204AL, DO-41, Axial Bag Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 600 V 15pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 175°C
HER306T/R

HER306T/R

DIODE GEN PURP 600V 3A DO201AD

EIC SEMICONDUCTOR INC.

5,000
RFQ
HER306T/RDatenblatt - DO-201AD, Axial Tape & Reel (TR) Active Standard 600 V 3A 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 600 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
HER305T/R

HER305T/R

DIODE GEN PURP 400V 3A DO201AD

EIC SEMICONDUCTOR INC.

5,000
RFQ
HER305T/RDatenblatt - DO-201AD, Axial Tape & Reel (TR) Active Standard 400 V 3A 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 50pF @ 4V, 1MHz - - Through Hole DO-201AD -65°C ~ 150°C
RM11C-BULK

RM11C-BULK

DIODE GEN PURP 1KV 1.2A D2

EIC SEMICONDUCTOR INC.

5,000
RFQ
RM11C-BULKDatenblatt - D-2, Axial Bag Active Standard 1000 V 1.2A 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V 30pF @ 4V, 1MHz - - Through Hole D2 -65°C ~ 175°C
FR101BULK

FR101BULK

DIODE GEN PURP 50V 1A DO41

EIC SEMICONDUCTOR INC.

39,000
RFQ
FR101BULKDatenblatt - DO-204AL, DO-41, Axial Bag Active Standard 50 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 50 V 50pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
FR102BULK

FR102BULK

DIODE GEN PURP 100V 1A DO41

EIC SEMICONDUCTOR INC.

38,000
RFQ
FR102BULKDatenblatt - DO-204AL, DO-41, Axial Bag Active Standard 100 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 100 V 50pF @ 4V, 1MHz - - Through Hole DO-41 -65°C ~ 150°C
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