Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
P1000A-CT

P1000A-CT

DIODE GEN PURP 50V 10A P600

Diotec Semiconductor

5,074
RFQ
P1000A-CTDatenblatt - P600, Axial Strip Active Standard 50 V 10A 1.05 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 50 V - - - Through Hole P600 -50°C ~ 175°C
P1000M-CT

P1000M-CT

DIODE GEN PURP 1KV 10A P600

Diotec Semiconductor

6,476
RFQ
P1000M-CTDatenblatt - P600, Axial Strip Active Standard 1000 V 10A 1.05 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1 V - - - Through Hole P600 -50°C ~ 175°C
BY550-400-CT

BY550-400-CT

DIODE GEN PURP 400V 5A DO201

Diotec Semiconductor

7,157
RFQ
BY550-400-CTDatenblatt - DO-201AA, DO-27, Axial Strip Active Standard 400 V 5A 1 V @ 5 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 400 V - - - Through Hole DO-201 -50°C ~ 175°C
P2000G-CT

P2000G-CT

DIODE GEN PURP 400V 20A P600

Diotec Semiconductor

6,358
RFQ
P2000G-CTDatenblatt - P600, Axial Strip Active Standard 400 V 20A 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 400 V - - - Through Hole P600 -50°C ~ 150°C
P2000K-CT

P2000K-CT

DIODE GEN PURP 800V 20A P600

Diotec Semiconductor

8,322
RFQ
P2000K-CTDatenblatt - P600, Axial Strip Active Standard 800 V 20A 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 800 V - - - Through Hole P600 -50°C ~ 150°C
GL1J-CT

GL1J-CT

DIODE GEN PURP 600V 1A DO213AA

Diotec Semiconductor

4,533
RFQ
GL1J-CTDatenblatt - DO-213AA Strip Active Standard 600 V 1A 1.3 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 600 V - - - Surface Mount DO-213AA (MINIMELF) -50°C ~ 175°C
SM4005-CT

SM4005-CT

DIODE GP 600V 1A MELF DO-213AB

Diotec Semiconductor

3,702
RFQ
SM4005-CTDatenblatt - DO-213AB, MELF Strip Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 5 µA @ 600 V - - - Surface Mount DO-213AB (MELF) -50°C ~ 175°C
P1000G-CT

P1000G-CT

DIODE GEN PURP 400V 10A P600

Diotec Semiconductor

2,909
RFQ
P1000G-CTDatenblatt - P600, Axial Strip Active Standard 400 V 10A 1.05 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 400 V - - - Through Hole P600 -50°C ~ 175°C
P600M-CT

P600M-CT

DIODE GEN PURP 1KV 6A P600

Diotec Semiconductor

9,442
RFQ
P600M-CTDatenblatt - P600, Axial Strip Active Standard 1000 V 6A 1.1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1 V - - - Through Hole P600 -50°C ~ 175°C
FR1K

FR1K

DIODE FAST SMA 800V 1A 500NS 150

Diotec Semiconductor

4,480
RFQ
FR1KDatenblatt - DO-214AC, SMA Tape & Reel (TR) Active Standard 800 V 1A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V - - - Surface Mount DO-214AC (SMA) -50°C ~ 150°C
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