Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
CRS15I30A(TE85L,QM

CRS15I30A(TE85L,QM

DIODE SCHOTTKY 30V 1.5A S-FLAT

Toshiba Semiconductor and Storage

2,905
RFQ
CRS15I30A(TE85L,QMDatenblatt - SOD-123F Tape & Reel (TR) Active Schottky 30 V 1.5A 460 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 30 V 50pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CRS10I40B(TE85L,QM

CRS10I40B(TE85L,QM

DIODE SCHOTTKY 40V 1A S-FLAT

Toshiba Semiconductor and Storage

4,863
RFQ
CRS10I40B(TE85L,QMDatenblatt - SOD-123F Tape & Reel (TR) Active Schottky 40 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V 62pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CRS30I40A(TE85L,QM

CRS30I40A(TE85L,QM

DIODE SCHOTTKY 40V 3A S-FLAT

Toshiba Semiconductor and Storage

4,107
RFQ
CRS30I40A(TE85L,QMDatenblatt - SOD-123F Tape & Reel (TR) Active Schottky 40 V 3A 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V 62pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CRS20I30B(TE85L,QM

CRS20I30B(TE85L,QM

DIODE SCHOTTKY 30V 2A S-FLAT

Toshiba Semiconductor and Storage

2,838
RFQ
CRS20I30B(TE85L,QMDatenblatt - SOD-123F Tape & Reel (TR) Active Schottky 30 V 2A 450 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 82pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CRS14(TE85L,Q,M)

CRS14(TE85L,Q,M)

DIODE SCHOTTKY 30V 2A S-FLAT

Toshiba Semiconductor and Storage

3,837
RFQ
CRS14(TE85L,Q,M)Datenblatt - SOD-123F Tape & Reel (TR) Active Schottky 30 V 2A 490 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 90pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CRS20I30A(TE85L,QM

CRS20I30A(TE85L,QM

DIODE SCHOTTKY 30V 2A S-FLAT

Toshiba Semiconductor and Storage

3,000
RFQ
CRS20I30A(TE85L,QMDatenblatt - SOD-123F Tape & Reel (TR) Active Schottky 30 V 2A 490 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 30 V 50pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CMS09(TE12L,Q,M)

CMS09(TE12L,Q,M)

DIODE SCHOTTKY 30V 1A M-FLAT

Toshiba Semiconductor and Storage

2,976
RFQ
CMS09(TE12L,Q,M)Datenblatt - SOD-128 Tape & Reel (TR) Active Schottky 30 V 1A 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 70pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CRS13(TE85L,Q,M)

CRS13(TE85L,Q,M)

DIODE SCHOTTKY 60V 1A S-FLAT

Toshiba Semiconductor and Storage

3,760
RFQ
CRS13(TE85L,Q,M)Datenblatt - SOD-123F Tape & Reel (TR) Active Schottky 60 V 1A 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 60 V 40pF @ 10V, 1MHz - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CMS17(TE12L,Q,M)

CMS17(TE12L,Q,M)

DIODE SCHOTTKY 30V 2A M-FLAT

Toshiba Semiconductor and Storage

2,998
RFQ
CMS17(TE12L,Q,M)Datenblatt - SOD-128 Tape & Reel (TR) Active Schottky 30 V 2A 480 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 90pF @ 10V, 1MHz - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CMS07(TE12L,Q,M)

CMS07(TE12L,Q,M)

DIODE SCHOTTKY 30V 2A M-FLAT

Toshiba Semiconductor and Storage

2,960
RFQ
CMS07(TE12L,Q,M)Datenblatt - SOD-128 Tape & Reel (TR) Active Schottky 30 V 2A 450 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V - - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
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