Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
40SQ04540A AXIAL LEADED SCHOTTKY DIODES ANBON SEMICONDUCTOR (INT'L) LIMITED |
2,768 |
|
|
- | Axial | Tape & Reel (TR) | Active | Schottky | 45 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | - | - | - | Through Hole | Axial | -55°C ~ 200°C |
|
AS3D020065A650V,20A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED |
137 |
|
|
- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 650 V | 56A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 1190pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
ASZD020120C1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
30 |
|
|
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AS4D040120P21200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
30 |
|
|
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
AS3D030065C650V,30A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED |
30 |
|
|
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 35A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 1805pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
