Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WB30FV60ALZWB30FV60AL/NAU000/NO MARK*CHIPS WeEn Semiconductors |
8,081 |
|
|
- | Die | Bulk | Active | Standard | 600 V | 30A | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 10 µA @ 600 V | - | - | - | Surface Mount | Wafer | -40°C ~ 175°C |
|
BYC58X-600,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
2,526 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 600 V | 8A | 3.2 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 12.5 ns | 150 µA @ 600 V | - | - | - | Through Hole | TO-220FP | 150°C (Max) |
|
WNSC2D051200D6JWNSC2D051200D/TO252/REEL 13" Q1 WeEn Semiconductors |
4,281 |
|
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | DPAK | -55°C ~ 175°C |
|
BYC20-600,127DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors |
5,624 |
|
|
- | TO-220-2 | Tube | Active | Standard | 500 V | 20A | 2.9 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 200 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 150°C (Max) |
|
BYC20D-600PQDIODE GEN PURP 600V 20A TO220AC WeEn Semiconductors |
5,761 |
|
|
- | TO-220-2 | Tube | Active | Standard | 600 V | 20A | 2.9 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
WNB199V5APTSVWNB199V5APTS/NAU000/NO MARK*CHIP WeEn Semiconductors |
2,990 |
|
|
- | Die | Bulk | Active | Standard | 600 V | 60A | 2 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 10 µA @ 600 V | - | - | - | Surface Mount | Wafer | 175°C |
|
WNSC6D04650QDIODE SIL CARB 650V 4A TO220AC WeEn Semiconductors |
9,581 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.4 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 233pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
|
WNSC2D0512006QDIODE SIL CARB 1.2KV 5A TO220AC WeEn Semiconductors |
5,992 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
WNSC2D06650XQDIODE SIL CARBIDE 650V 6A TO220F WeEn Semiconductors |
7,880 |
|
|
- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | - | - | Through Hole | TO-220F | 175°C |
|
WNSC2D06650QDIODE SIL CARB 650V 6A TO220AC WeEn Semiconductors |
7,376 |
|
|
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 198pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C |
