Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

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Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
VS-APU3006L-M3

VS-APU3006L-M3

DIODE GEN PURP 600V 30A TO247-3

Vishay General Semiconductor - Diodes Division

8,982
RFQ
VS-APU3006L-M3Datenblatt FRED Pt® TO-247-3 Tube Obsolete Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - - - Through Hole TO-247-3 -65°C ~ 175°C
VS-EPH3006L-M3

VS-EPH3006L-M3

DIODE GEN PURP 600V 30A TO247-2

Vishay General Semiconductor - Diodes Division

5,317
RFQ
VS-EPH3006L-M3Datenblatt FRED Pt® TO-247-2 Tube Obsolete Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - - - Through Hole TO-247-2 -65°C ~ 175°C
VS-EPU3006L-M3

VS-EPU3006L-M3

DIODE GEN PURP 600V 30A TO247-2

Vishay General Semiconductor - Diodes Division

5,641
RFQ
VS-EPU3006L-M3Datenblatt FRED Pt® TO-247-2 Tube Obsolete Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - - - Through Hole TO-247 Long Leads -65°C ~ 175°C
VS-EPU6006L-M3

VS-EPU6006L-M3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

2,254
RFQ
VS-EPU6006L-M3Datenblatt FRED Pt® TO-247-2 Tube Obsolete Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
VS-MBR10T100

VS-MBR10T100

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division

8,346
RFQ
VS-MBR10T100Datenblatt - TO-220-2 Tape & Reel (TR) Active Schottky 100 V 10A 790 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 400pF @ 5V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-20UT04

VS-20UT04

DIODE SCHOTTKY 45V 20A IPAK

Vishay General Semiconductor - Diodes Division

8,969
RFQ
VS-20UT04Datenblatt - TO-251-3 Stub Leads, IPAK Tape & Reel (TR) Active Schottky 45 V 20A 610 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V 1900pF @ 5V, 1MHz - - Through Hole IPAK (TO-251) -55°C ~ 150°C
1N4001GPE-E3/91

1N4001GPE-E3/91

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

9,806
RFQ
1N4001GPE-E3/91Datenblatt SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Reel (TR) Obsolete Standard 50 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 50 V 8pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
FESE16HT-E3/45

FESE16HT-E3/45

DIODE GEN PURP 500V 16A TO220AC

Vishay General Semiconductor - Diodes Division

4,126
RFQ
FESE16HT-E3/45Datenblatt - TO-220-2 Tape & Reel (TR) Obsolete Standard 500 V 16A 1.5 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 500 V 145pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
FESE16JT-E3/45

FESE16JT-E3/45

DIODE GEN PURP 600V 16A TO220AC

Vishay General Semiconductor - Diodes Division

5,213
RFQ
FESE16JT-E3/45Datenblatt - TO-220-2 Tape & Reel (TR) Obsolete Standard 600 V 16A 1.5 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V 145pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
FESE8HT-E3/45

FESE8HT-E3/45

DIODE GEN PURP 500V 8A TO220AC

Vishay General Semiconductor - Diodes Division

3,686
RFQ
FESE8HT-E3/45Datenblatt - TO-220-2 Tape & Reel (TR) Obsolete Standard 500 V 8A 1.5 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 500 V 50pF @ 4V, 1MHz - - Through Hole TO-220AC -55°C ~ 150°C
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