Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCS206AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
9,883 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS306APC9DIODE SILICON CARBIDE 650V 6A Rohm Semiconductor |
4,796 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
|
SCS304AMCDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
5,166 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS215AECDIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor |
7,941 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
|
SCS215AGHRCDIODE SIL CARB 650V 15A TO220AC Rohm Semiconductor |
6,299 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
|
SCS220AGCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
9,565 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
|
SCS208AMCDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
7,856 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS306AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
6,403 |
|
|
- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
|
SCS220AECDIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor |
2,874 |
|
|
- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
|
SCS220AGHRCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
5,973 |
|
|
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
