Einzeldioden

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht

Alles zurücksetzen
Alles anwenden
Ergebnis
Foto Herst.-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Kapazität @ Vr, F Klasse Qualifizierung Montageart Lieferant Gerätepaket Betriebstemperatur - Sperrschicht
1N3611

1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

341
RFQ
1N3611Datenblatt - A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
JANTX1N3611

JANTX1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

356
RFQ
JANTX1N3611Datenblatt - A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
JANTX1N5806

JANTX1N5806

DIODE GEN PURP 150V 1A AXIAL

Microchip Technology

149
RFQ
JANTX1N5806Datenblatt - A, Axial Bulk Active Standard 150 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
1N5804

1N5804

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology

299
RFQ
1N5804Datenblatt - A, Axial Bulk Active Standard 100 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
APT60S20SG

APT60S20SG

DIODE SCHOTTKY 200V 75A D3

Microchip Technology

187
RFQ
APT60S20SGDatenblatt - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Schottky 200 V 75A 900 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 1 mA @ 200 V - - - Surface Mount D3PAK -55°C ~ 150°C
1N5614US

1N5614US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

250
RFQ
1N5614USDatenblatt - SQ-MELF, A Bulk Active Standard 200 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - - - Surface Mount D-5A -65°C ~ 200°C
1N5550

1N5550

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

262
RFQ
1N5550Datenblatt - B, Axial Bulk Active Standard 200 V 3A 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - - - Through Hole B, Axial -65°C ~ 175°C
1N5802

1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

298
RFQ
1N5802Datenblatt - A, Axial Bulk Active Standard 50 V 1A 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz - - Through Hole A, Axial -65°C ~ 175°C
1N5807

1N5807

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

198
RFQ
1N5807Datenblatt - B, Axial Bulk Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5417

JANTX1N5417

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

204
RFQ
JANTX1N5417Datenblatt - B, Axial Bulk Active Standard 200 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
Total 5123 Record«Prev1... 56789101112...513Next»
Masstock Electronics

Suchen

Masstock Electronics

Produkte

Masstock Electronics

Telefon

Masstock Electronics

Benutzer

Masstock Electronics Masstock Electronics Masstock Electronics
WHATSAPP

+86 13760362468

Masstock Electronics