Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,637 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,905 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRD3CH24DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
6,613 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRD3CH31DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,352 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies |
6,919 |
|
|
- | Die | Bulk | Obsolete | Standard | 1200 V | 100A | 2.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 20 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
IRD3CH53DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,541 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies |
5,947 |
|
|
- | Die | Bulk | Obsolete | Standard | 1200 V | 5A | 2.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 96 ns | 100 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
4,112 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies |
8,722 |
|
|
- | Die | Bulk | Obsolete | Standard | 1200 V | 10A | 2.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 154 ns | 200 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
IRD3CH9DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
5,274 |
|
|
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
