Einzeldioden
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Kapazität @ Vr, F | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket | Betriebstemperatur - Sperrschicht |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDWD120E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies |
210 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD60E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies |
187 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 60 A | Fast Recovery =< 500ns, > 5A (Io) | 99 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD75E120D7XKSA1DIODE GEN PURP 1200V 116A TO247 Infineon Technologies |
235 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 116A | 3 V @ 75 A | Fast Recovery =< 500ns, > 5A (Io) | 195 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD75E65E7XKSA1DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies |
210 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 100A | 2.1 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 97 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD100E120D7XKSA1DIODE GEN PURP 1200V 146A TO247 Infineon Technologies |
224 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 146A | 3 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 205 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD100E65E7XKSA1DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies |
232 |
|
|
- | TO-247-2 | Tube | Active | Standard | 650 V | 150A | 2.1 V @ 100 A | Fast Recovery =< 500ns, > 5A (Io) | 98 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDFW40E65D1EXKSA1DIODE GP 650V 42A TO247-3-AI Infineon Technologies |
210 |
|
|
- | TO-247-3 | Tube | Active | Standard | 650 V | 42A | 2.1 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 76 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-AI | -40°C ~ 175°C |
|
IDWD120E120D7XKSA1DIODE GEN PURP 1200V 177A TO247 Infineon Technologies |
129 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 177A | 3 V @ 120 A | Fast Recovery =< 500ns, > 5A (Io) | 215 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD140E120D7XKSA1DIODE GEN PURP 1200V 207A TO247 Infineon Technologies |
167 |
|
|
- | TO-247-2 | Tube | Active | Standard | 1200 V | 207A | 3 V @ 140 A | Fast Recovery =< 500ns, > 5A (Io) | 225 ns | 20 µA @ 1200 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
|
IDWD10G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
|
CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 35A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 2 kV | 1140pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
