Dioden-Arrays
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Diodenkonfiguration | Technologie | Spannung - Gleichstromsperrspannung (Vr) (Max) | Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Geschwindigkeit | Sperrerholungszeit (trr) | Strom - Sperrleck @ Vr | Betriebstemperatur - Sperrschicht | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSC2X31SDA170JDIODE MOD SIC 1700V 30A SOT227 Microchip Technology |
16 |
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- | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1700 V | 30A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSC2X100SDA120JDIODE MOD SIC 1200V 100A SOT227 Microchip Technology |
10 |
|
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- | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 100A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
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MSCDC100KK70D1PAGDIODE MODULE SIC 700V 100A D1P Microchip Technology |
7 |
|
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- | Module | Box | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 700 V | 100A | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 700 V | -40°C ~ 175°C | - | - | Chassis Mount | D1P |
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MSCDC200KK70D1PAGDIODE MODULE SIC 700V 200A D1P Microchip Technology |
18 |
|
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- | Module | Box | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 700 V | 200A | 1.8 V @ 200 A | No Recovery Time > 500mA (Io) | 0 ns | 800 µA @ 700 V | -40°C ~ 175°C | - | - | Chassis Mount | D1P |
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MSCDC150KK120D1PAGDIODE MODULE SIC 1200V 150A D1P Microchip Technology |
19 |
|
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- | Module | Box | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1200 V | 150A | 1.8 V @ 150 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 1200 V | -40°C ~ 175°C | - | - | Chassis Mount | D1P |
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MSCDC150A120D1PAGDIODE MODULE SIC 1200V 150A D1P Microchip Technology |
4 |
|
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- | Module | Box | Active | 1 Pair Series Connection | SiC (Silicon Carbide) Schottky | 1200 V | 150A | 1.8 V @ 150 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 1200 V | -40°C ~ 175°C | - | - | Chassis Mount | D1P |
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MSCDC100KK170D1PAGDIODE MODULE SIC 1700V 100A D1P Microchip Technology |
4 |
|
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- | Module | Box | Active | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 1700 V | 100A | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1700 V | -40°C ~ 175°C | - | - | Chassis Mount | D1P |
|
MSCDC300A70AGDIODE MODULE SIC 700V 300A SP6 Microchip Technology |
23 |
|
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- | Module | Tube | Active | 1 Pair Series Connection | SiC (Silicon Carbide) Schottky | 700 V | 300A | 1.8 V @ 300 A | No Recovery Time > 500mA (Io) | 0 ns | 1.2 mA @ 700 V | -40°C ~ 175°C | - | - | Chassis Mount | SP6 |
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MSCDC600A70AGDIODE MODULE SIC 700V 600A SP6 Microchip Technology |
2 |
|
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- | Module | Tube | Active | 1 Pair Series Connection | SiC (Silicon Carbide) Schottky | 700 V | 600A | 1.8 V @ 600 A | No Recovery Time > 500mA (Io) | 0 ns | 2.4 mA @ 700 V | -40°C ~ 175°C | - | - | Chassis Mount | SP6 |
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MSCDC300A170AGDIODE MODULE SIC 1700V 300A Microchip Technology |
2 |
|
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- | Module | Tube | Active | 1 Pair Series Connection | SiC (Silicon Carbide) Schottky | 1700 V | 300A | 1.8 V @ 300 A | No Recovery Time > 500mA (Io) | 0 ns | 1.2 mA @ 1700 V | -40°C ~ 175°C | - | - | Chassis Mount | - |
