IGBT Module
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | IGBT-Typ | Konfiguration | Spannung - Kollektor-Emitter-Durchbruch (Max) | Strom - Kollektor (Ic) (Max) | Leistung – Max | Vce(ein) (Max) @ Vge, Ic | Strom - Kollektor-Abschaltung (Max) | Eingangskapazität (Cies) @ Vce | Eingang | NTC-Thermistor | Betriebstemperatur | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTGT75A170D1GIGBT MODULE 1700V 120A 520W D1 Microsemi Corporation |
2,732 |
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- | D1 | Bulk | Obsolete | Trench Field Stop | Half Bridge | 1700 V | 120 A | 520 W | 2.4V @ 15V, 75A | 5 mA | 6.5 nF @ 25 V | Standard | No | - | Chassis Mount | D1 |
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APTGT75SK170D1GIGBT MODULE 1700V 120A 520W D1 Microsemi Corporation |
5,043 |
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- | D1 | Bulk | Obsolete | Trench Field Stop | Single | 1700 V | 120 A | 520 W | 2.4V @ 15V, 75A | 5 mA | 6.5 nF @ 25 V | Standard | No | - | Chassis Mount | D1 |
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APTCV90TL12T3GIGBT MODULE 1200V 80A 280W SP3 Microsemi Corporation |
2,254 |
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- | SP3 | Bulk | Obsolete | Trench Field Stop | Three Level Inverter - IGBT, FET | 1200 V | 80 A | 280 W | 2.2V @ 15V, 50A | 1 mA | 2.77 nF @ 25 V | Standard | Yes | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 |
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APTGFQ25H120T2GIGBT MODULE 1200V 40A 227W SP2 Microsemi Corporation |
5,500 |
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- | SP2 | Bulk | Active | NPT and Fieldstop | Full Bridge | 1200 V | 40 A | 227 W | 2.1V @ 15V, 25A | 250 µA | 2.02 nF @ 25 V | Standard | Yes | - | Through Hole | SP2 |
