Brückengleichrichter
| Foto | Herst.-Teilenr. | Verfügbarkeit | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Diodentyp | Technologie | Spannung - Spitzensperrspannung (Max) | Strom - Durchschnittlich gleichgerichtet (Io) | Spannung - Vorwärtsspannung (Vf) (Max) @ If | Strom - Sperrleck @ Vr | Betriebstemperatur | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BR102BRIDGE RECT 1P 200V 10A BR-10 GeneSiC Semiconductor |
7,585 |
|
|
- | 4-Square, BR-10 | Bulk | Active | Single Phase | Standard | 200 V | 10 A | 1.1 V @ 5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | BR-10 |
|
BR106BRIDGE RECT 1P 600V 10A BR-10 GeneSiC Semiconductor |
7,521 |
|
|
- | 4-Square, BR-10 | Bulk | Active | Single Phase | Standard | 600 V | 10 A | 1.1 V @ 5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | BR-10 |
|
BR108BRIDGE RECT 1P 800V 10A BR-10 GeneSiC Semiconductor |
4,848 |
|
|
- | 4-Square, BR-10 | Bulk | Active | Single Phase | Standard | 800 V | 10 A | 1.1 V @ 5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | BR-10 |
|
GBJ25KBRIDGE RECT 1PHASE 800V 25A GBJ GeneSiC Semiconductor |
5,370 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 800 V | 25 A | 1.05 V @ 12.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
|
GBJ25BBRIDGE RECT 1PHASE 100V 25A GBJ GeneSiC Semiconductor |
2,987 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 100 V | 25 A | 1.05 V @ 12.5 A | 10 µA @ 100 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
|
GBJ25JBRIDGE RECT 1PHASE 600V 25A GBJ GeneSiC Semiconductor |
4,823 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 600 V | 25 A | 1.05 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
|
GBJ25GBRIDGE RECT 1PHASE 400V 25A GBJ GeneSiC Semiconductor |
5,158 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 400 V | 25 A | 1.05 V @ 12.5 A | 10 µA @ 400 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
|
GBJ25DBRIDGE RECT 1PHASE 200V 25A GBJ GeneSiC Semiconductor |
9,318 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 200 V | 25 A | 1.05 V @ 12.5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
|
GBJ25MBRIDGE RECT 1PHASE 1KV 25A GBJ GeneSiC Semiconductor |
5,118 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 1 kV | 25 A | 1.05 V @ 12.5 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
|
GBJ30DBRIDGE RECT 1PHASE 200V 30A GBJ GeneSiC Semiconductor |
3,051 |
|
|
- | 4-SIP, GBJ | Bulk | Active | Single Phase | Standard | 200 V | 30 A | 1.05 V @ 15 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBJ |
